Synthesis of 2D materials by CVD
Description
The synthesis of two-dimensional (2D) materials from the Transition Metal Dichalcogenide (TMDs) family is carried out at C2N by Chemical Vapor Deposition (CVD) on amorphous support (silica) or Graphene/SiC substrate to obtain single crystals lateral extension 20-100 micrometers and controlled thickness (1 or 2 single-layer). A differential interference contrast (DIC) optical microscope is associated with this equipment to study the morphological characteristics of the samples obtained.
Location
Centre for Nanosciences and Nanotechnologie (C2N), Palaiseau
Technical characteristics
- Tubular horizontal CVD reactor (Nabertherm).
- Allowable pressure 2-200 mbar, Ar, N2, H2. Maximum working temperature 950°C.
- Stabilized growth materials: WSe2.
- Materials in development: MoSe2, WTe2.
- Dedicated differential interference contrast (DIC) optical microscope.
Associated targeted project
FastNano
Nanomaterials